f e a tu r e s v d s ( v ) = 3 0 v i d = 5 . 8 a ( v g s = 1 0 v ) r d s ( o n ) 2 8 m ( v g s = 1 0 v ) r d s ( o n ) 4 3 m ( v g s = 4 . 5 v ) a b s o l u t e m a x i m u m r a t i n g s t a = 2 5 s y m b o l r a t i n g u n i t v d s 3 0 v g s 2 0 t a = 2 5 a4** ao3404 n-channel enhancement mosfet 1 2 3 simplified outline(sot23-3l) 1. gate 2. source 3. drain www.yfwdiode.com
e l e c t r i c a l c h a r a c t e r i s t i c s t a = 2 5 p a r a m e t e r s y m b o l t e s t c o n d i ti o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = 2 5 0 a , v g s = 0 v 3 0 v v d s = 2 4 v , v g s 1 v 0 = v d s = 2 4 v , v g s =0 v , t j =5 5 5 g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 2 0 v 1 0 0 n a g a t e t h r e s h o l d v o l t a g e v g s ( t h ) v d s = v g s i d = 2 5 0 a 1 1 . 9 3 v i t n e r r u c n i a r d e t a t s n o d ( on) v g s = 4 . 5 v , v d s a 0 2 v 5 = v g s = 1 0 v , i d 8 2 5 . 2 2 a 8 . 5 = v g s = 1 0 v , i d = 5 . 8 a t j = 1 2 5 3 1 . 3 3 8 v g s = 4 . 5 v , i d 3 4 5 . 4 3 a 0 . 5 = m f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = 5 v , i d s 5 . 4 1 0 1 a 8 . 5 = v e g a t l o v d r a w r o f e d o i d s d i s v 1 6 7 . 0 a 1 = m a x i m u m b o d y - d i o d e c o n t i n u o u s c u r r e n t i s 2 . 5 a r e v e r s e t r a n s f e r c a p a c i t a n c e c i ss 6 8 0 8 2 0 p f c e c n a t s i s e r e t a g o s s 1 0 2 p f c e c n a t i c a p a c t u p n i r ss 7 7 p f r e c n a t i c a p a c t u p t u o g v g s = 0 v , v d s 6 . 3 3 z h m 1 = f , v 0 = q ) v 0 1 ( e g r a h c e t a g l a t o t g 1 3 . 8 8 1 7 n c q ) v 5 . 4 ( e g r a h c e t a g l a t o t g 6 . 7 8 8 . 1 n c q e g r a h c e c r u o s e t a g g s 1 . 8 n c q e g r a h c n i a r d e t a g g d 3 . 1 2 n c t e m i t e s i r n o - n r u t d ( o n ) 4 . 6 6 . 5 n s t e m i t y a l e d f f o - n r u t r 3 . 8 5 . 7 n s t e m i t l l a f f f o - n r u t d(o f f ) 2 0 . 9 3 0 n s t e m i t y a l e d n o - n r u t f 5 7 . 5 n s b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r i f = 5 . 8 a , d i / d t = 1 0 0 a / s 1 6 . 1 2 1 n s b o d y d i o d e r e v e r s e r e c o v e r y c h a r g e q r r i f = 5 . 8 a , d i / d t = 1 0 0 a / s 7 . 4 1 0 n c a m v g s = 0 v , v d s = 1 5 v , f = 1 m h z v g s = 1 0 v , v d s = 1 5 v , i d = 5 . 8 a v g s = 1 0 v , v d s = 1 5 v , r l = 2 . 7 , r g e n = 3 r d s ( o n ) s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e i d s s z e r o g a t e v o l t a g e d r a i n c u r r e n t m a r k i n g m a r k i n g a 4* ao3404 www.yfwdiode.com
t y p i c a l c h a r a c t e r i s i t i c s 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d ( a ) v gs =3v 3.5 v 4v 4.5v 10v 0 4 8 12 16 20 0 0. 5 1 1. 5 2 2. 5 3 3. 5 4 4.5 v gs (volts) figure 2: transfer characteristics i d ( a ) 10 20 30 40 50 60 0 5 1 0 1 5 20 i d (amps) figure 3: on-resistance vs. drain current and gate voltage r d s ( o n ) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0. 0 0. 2 0. 4 0. 6 0. 8 1.0 v sd (volts) figure 6: body diode characteristics i s a m p s 125c 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 0 5 0 10 0 15 0 200 temperature ( c) figure 4: on-resistance vs. junction temperature n o r m a l i z e d o n - r e s i s t a n c e v gs =10v v gs =4.5v 10 20 30 40 50 60 70 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r d s ( o n ) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =5a 125c 25c 25c i d =5a 5v 6 v ( ? ) ao3404 www.yfwdiode.com
. t y p i c a l c h a r a c t e r i s i t i c s 0 2 4 6 8 10 0 2 4 6 8 1 0 1 2 14 q g (nc) figure 7: gate-charge characteristics v g s (v o l t s ) 0 100 200 300 400 500 600 700 800 900 1000 0 5 1 0 1 5 2 0 2 5 30 v ds (volts) figure 8: capacitance characteristics c a p a c i t a n c e ( p f ) c iss 0 10 20 30 40 0.00 1 0.0 1 0. 1 1 1 0 10 0 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) p o w e r w 0.01 0.1 1 10 0.0000 1 0.000 1 0.00 1 0.0 1 0. 1 1 1 0 10 0 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z j a n o r m a l i z e d t r a n s i e n t t h er m a l r e s i s t a n c e c oss c rss 0.1 1 10 100 0. 1 1 1 0 100 v ds (volts) i d ( a m p s ) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 1 0s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =5.8a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =90c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c f=1mhz v gs =0v 10 s ao3404 www.yfwdiode.com
ao3404 sot23-3l unit mm 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 1.9 0.10 0.20 0.85 1.15 dimensions (mm are the original dimensions) 0.40 - a 2.70 3.10 b 2.65 2.95 c d e f g h k j l m 0 10 1.00 1.30 www.yfwdiode.com
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